N-Channel, 20V, 0.90A, Small Signal MOSFET

Descriptions

The FD2020EA is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trenchtechnology and design to provide excellent R_{DS (ON)}with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product FD2020EA is Pb-free and Halogen-free.

Features

● Trench Technology 

● Supper high density cell design 

● Excellent ON resistance

● Extremely Low Threshold Voltage 

● Small package SOT-23 

● ESD: 2KV

Applications

● DC-DC converter circuit 

●  Small Signal Switch

●  Load Switch 

●  Level Shift

Absolute Maximum ratings

Thermal resistance ratings

a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper 

b Surface mounted on FR4 board using minimum pad size, 1oz copper 

c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1% 

d Repetitive rating, pulse width limited by junction temperature TJ=150°C.

Electronics Characteristics (Ta=25o C, unless otherwise noted)

Typical Characteristics (Ta=25o C, unless otherwise noted)

Package outline dimensions